1 Drain to Source Breakdown Voltage漏极-源极击穿电压
2 Drain Leakage Current漏极泄电流
3 Gate Leakage Current(Positive gate bias)栅极泄电流(正向栅偏)
4 Gate Leakage Current(Negative gate bias)栅极泄电流(反向栅偏)
5 Gate Threshold Voltage(VGS = VDS)栅极阈值电压(VGS = VDS)
6 Gate Threshold Voltage(Constant VDS)栅极阈值电压(恒定VDS)
7 Transconductance跨导
8 Drain to Source On Resistance漏极-源极导通电阻
9 Drain to Source On Voltage漏极-源极导通电压
10 Body Diode Forward Voltage体二极管正向电压
11 Internal Gate Resistance栅极内阻
12 Input Capacitance输入电容
13 Output Capacitance输出电容
14 Reverse Transfer Capacitance反向传输电容
15 Total Gate Charge栅极电荷
16 Gate to Source Charge栅极-源极电荷
17 Gate to Drain Charge栅极-漏极电荷
18 Gate to Source Plateau Voltage栅极-源极平台电压
19 Turn-On Delay Time开通延迟韶光
20 Rise Time上升韶光
21 Turn-Off Delay Time关断延迟韶光
22 Fall Time低落韶光
23 Turn-on energy开通能量
24 Turn-off energy关断能量
25 Reverse Recovery Time反向规复韶光
26 Reverse Recovery Charge反向规复电荷
27 Reverse Recovery Current反向规复电流
28 Peak Diode Recovery二极管反向规复峰值
29 ID-VDS curve with various VGS不同VGS下的ID-VDS曲线
30 ID-VGS curve with constant VDS恒定VDS下的ID-VGS曲线
31 Gfs-VGS curve with constant VDS恒定VDS下的Gfs-VGS曲线
32 RDS(on)-ID curve with various VGS不同VGS下的RDS(on)-ID曲线
33 RDS(on)-VGS curve with various ID 不同ID下的RDS(on)-VGS曲线
34 VDS-VGS curve with various ID 不同ID下的VDS-VGS曲线
35 Forward current characteristics of built-in diode内置二极管的IS-VS曲线
36 Capacitance to VDS curve including Ciss, Coss and Crss Ciss/Coss/Crss电容-VDS曲线
37 Gate charge to VGS curve 栅极电荷-VGS曲线
38 short-circuit capability短路耐量
39 thermal resistance,junction - case结-壳热阻
可靠性试验项目
1 External Visual外不雅观检讨
2 High Temperature Reverse Bias高温反向偏压
3 High Temperature Gate Bias高温栅极偏压
4 Thermal shock test热冲击
5 Vibration振动
6 Mechanical shock机器冲击
7 Unbiased Highly Accelerated Stress Test无偏高加速应力试验
8 Autoclave高压釜试验
9 Highly Accelerated Stress Test高加速应力试验
10 High Humidity High Temp.Reverse Bias高温高湿反向偏压
11 High-temperature storage高温存储
12 Low-temperature storage低温存储
13 Insulation test绝缘测试
14 Power cycling功率循环
15 Power cycle功率循环
16 ESD Characterization EDS特性
17 Destructive Physical Analysis 毁坏性物理剖析
18 Physical Dimension物理尺寸
19 Resistance to Solder Heat焊接热耐久性
20 Solderability可焊性
21 Thermal Resistance热阻
22 Wire Bond Strength引线键合强度
23 Bond Shear键合剪切试验
24 Die Shear芯片剪切试验
25 Dielectric Integrity介电强度试验
关键测试设备
1.静态参数、电容及电荷测试设备
品牌型号：博电科技/PST6747A，核心指标：0-2200A/0-3000V(可扩展为100000V)
